Lv5
850 积分 2023-03-09 加入
Quality improvement of SiC single crystal by modification of hot zone design adoption with denser graphite insulation in PVT growth
6个月前
已完结
Analysis of dislocation configurations in SiC crystals through X-ray topography aided by ray tracing simulations
6个月前
已完结
Study on the Mechanism of Facet Formation Based on the Shape of Temperature Field
7个月前
已完结
Defect formation during the initial stage of physical vapor transport growth of 4H–SiC in the Formula Not Shown direction
1年前
已关闭
半导体碳化硅中位错的识别及其在单晶生长过程中的演变
1年前
已完结
基于碳化硅衬底的宽禁带半导体外延
1年前
已完结
SiC单晶基平面位错和微管缺陷的研究
1年前
已完结
Analysis of Basal Plane Bending and Basal Plane Dislocations in 4H-SiC Single Crystals
1年前
已完结
Characterization of Prismatic Slip in SiC Crystals by Chemical Etching Method
1年前
已关闭
Numerical simulation of a novel method for PVT growth of SiC by adding a graphite block
2年前
已关闭
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