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1036 积分 2024-07-30 加入
Controllable Switching between Highly Rectifying Schottky and p–n Junctions in an Ionic MoS2 Device
4个月前
已完结
Ferroelectric Perovskite/MoS2 Channel Heterojunctions for Wide‐Window Nonvolatile Memory and Neuromorphic Computing
5个月前
已完结
Revolutionizing Nonvolatile Memory: Advances and Future Prospects of 2D Floating-Gate Technology
7个月前
已完结
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