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段xy123
Lv1
10 积分
2022-11-28 加入
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Programmable graded doping for reconfigurable molybdenum ditelluride devices
12天前
已完结
Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory
12天前
已完结
Carrier Recirculation Induced High-Gain Photodetector Based on van der Waals Heterojunction
4个月前
已完结
Ultrafast and Broad-Band Graphene Heterojunction Photodetectors with High Gain
4个月前
已完结
Interfacial Effect on the Transient Dielectric Function and Charge Transfer in a Monolayer WS2/Si Heterojunction
4个月前
已完结
Proposal and Simulation of Ga2O3 MOSFET With PN Heterojunction Structure for High-Performance E-Mode Operation
7个月前
已完结
Highly Sensitive Photodetector Based on the n-Si/p-GaSe Vertical Heterojunction
7个月前
已完结
2D Material Infrared Photonics and Plasmonics
7个月前
已完结
Influence of the Device Structure on the Electrical and Photodetector Properties of n-MoS2/p-GaSe Heterojunction Optoelectronic Devices
7个月前
已完结
Self‐Powered Te/Wse 2 Van Der Waals Heterojunction Photodetectors With High Light On/Off Ratio And Fast Response
10个月前
已完结
没有进行任何应助
点赞
12天前
感谢,点赞
4个月前
速度真快,帮大忙了
4个月前
速度真快
7个月前
速度真快,点赞
7个月前
速度真快,点赞,感谢
7个月前
帮大忙了
10个月前
DOI错误https://doi.org/10.1021/acs.nanolett.3c00031
1年前
标题错误,正确是Scaling of MoS2 Transistors and Inverters to Sub-10 nm Channel Length with High Performance
1年前
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