Lv1
68 积分 2023-11-05 加入
Threading dislocations reduction of GaN-on-Si by introducing AlN/3D-GaN with SiN interlayer for photodetectors
22天前
已关闭
Achieving high carrier concentration β-Ga2O3 epilayers via MOCVD using SiCl4 as dopant
2个月前
已完结
Recent Advances in Ohmic Contact with β-Ga2O3: A Review
2个月前
已完结
Composite channel 100 nm InP HEMT with ultrathin barrier for millimetre wave applications
2个月前
已完结
GaN-based vertical-cavity surface-emitting lasers with AlInN/GaN distributed Bragg reflectors
2个月前
已完结
Chemical reaction mechanism between trimethylgallium and oxygen for β-gallium oxide growth: Thermodynamic and experimental studies
3个月前
已完结
Kilovolt-class β-Ga2O3 field-plated Schottky barrier diodes with MOCVD-grown intentionally 1015 cm−3 doped drift layers
3个月前
已关闭
Competitive surface adsorption governs unintentional Si incorporation in MOCVD-grown β-Ga2O3 (001) homoepilayers
3个月前
已完结
A Pathway to High-Quality Heteroepitaxial Ga2O3 Films via Metalorganic Chemical Vapor Deposition
3个月前
已完结
Low-Threshold and High-Speed Photonic-Crystal Surface-Emitting Lasers Without Regrowth
4个月前
已完结
皖公网安备34019202002308
