Lv11
28 积分 2022-12-13 加入
Modeling and simulation of SiC CVD in the horizontal hot-wall reactor concept
8小时前
已完结
High uniform N-type doping of 4H-SiC homoepitaxy based on a horizontal hot-wall reactor
8小时前
已完结
Effects of growth pressure on the characteristics of the β-Ga2O3 thin films deposited on (0001) sapphire substrates
11天前
已关闭
Implementation of Polypyrrole‐Modified Cleanroom Wiper as Electrode for Moisture‐Electricity Generation
11天前
已关闭
Insights into the effect of susceptor rotational speed in CVD reactor on the quality of 4H-SiC epitaxial layer on homogeneous substrates
11天前
已完结
High uniform N-type doping of 4H-SiC homoepitaxy based on a horizontal hot-wall reactor
11天前
已完结
Interface failure behavior and mechanisms of 4H-SiC wafer with alloy backside layer caused by different dicing technologies
16天前
已完结
Dislocations in 4H silicon carbide
16天前
已完结
Structural analysis of stacking fault complex origin in 4H-SiC epitaxial wafer
17天前
已完结
Insights into the effect of susceptor rotational speed in CVD reactor on the quality of 4H-SiC epitaxial layer on homogeneous substrates
17天前
已完结
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