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10 积分 2025-03-10 加入
Reduced Leakage and Enhanced Endurance via an ITO Oxygen Reservoir Layer in HZO Ferroelectric Capacitors
20天前
已完结
Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors
9个月前
已完结
A stable rhombohedral phase in ferroelectric Hf(Zr) 1+ x O 2 capacitor with ultralow coercive field
10个月前
已完结
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