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Investigation of Termination Soft Breakdown Mechanisms in 1700V-SiC MOSFETs Under HTRB with Different Temperatures
1天前
已完结
A novel 4H–SiC power MOSFET with source-side poly-Si/SiC heterojunctions for single-event effects hardening
19天前
已完结
Experimental Demonstration of the Improved Single-Event Irradiation Hardness of Split-Gate 4H-SiC Power MOSFET With Integrated the P+N+ Structure
20天前
已完结
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