Lv11
50 积分 2025-01-13 加入
On the dynamic RON, vertical leakage and capacitance behavior in pGaN HEMTs with heavily carbon-doped buffers
3小时前
已完结
Mechanism of frequency-dependent gate breakdown in p-GaN/AlGaN/GaN HEMTs
2个月前
已完结
Process of Au-Free Source/Drain Ohmic Contact to AlGaN/GaN HEMT
2个月前
已完结
A Normally-Off GaN MIS-HEMT Fabricated Using Atomic Layer Etching to Improve Device Performance Uniformity for High Power Applications
3个月前
已完结
皖公网安备34019202002308
