Lv11
40 积分 2024-09-27 加入
Attaining inhibition of sneak current and versatile logic operations in a singular halide perovskite memristive device by introducing appropriate interface barriers
7小时前
已完结
Effect of stoichiometry on the resistive switching characteristics of STO resistive memory
7小时前
已完结
A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐k, and Layered Dielectrics
5天前
已完结
Imaging Dielectric Breakdown in Valence Change Memory
7天前
已完结
Hard- and soft-breakdown modeling in <001> oriented β-Ga2O3 Schottky barrier diode
7天前
已完结
Soft breakdown characteristics of ultralow-k time-dependent dielectric breakdown for advanced complementary metal-oxide semiconductor technologies
10天前
已完结
Thermal conductivity, electrical resistivity, and Seebeck coefficient of high-purity chromium from 280 to 1000 K
10天前
已完结
A non-defect precursor gate oxide breakdown model
17天前
已完结
Model of Breakdown of MOS-Structures by the Mechanism of Anode Hydrogen Release
17天前
已完结
Effects of measurement temperature and metal thickness on Schottky diode characteristics
24天前
已完结
皖公网安备34019202002308
