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40 积分 2026-02-26 加入
4.15 kV/4.6 mΩ⋅cm² 4H-SiC Epi-Refilled Super-Junction Schottky Diode With Ring Assisted Super-Junction Termination Extension
6天前
已完结
Comparative Performance Evaluation and Analysis of High Voltage Superjunction, Charge-Balanced, and Conventional 4H-SiC DMOSFETs at Cryogenic and High Temperatures
2个月前
已完结
Characterization and analysis of high-quality 4H-SiC epitaxy suitable for the super-junction adopting “multiple epitaxy-channeling implantation” route
2个月前
已完结
A Multiple-Ring-Modulated JTE Technique for 4H-SiC Power Device With Improved JTE-Dose Window
2个月前
已完结
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