Lv12
40 积分 2025-09-30 加入
Theory of Semiconductor Superjunction Devices
1小时前
已完结
Gallium nitride devices for power electronic applications
23小时前
已完结
Properties of Si donors and persistent photoconductivity in AlGaN
26天前
已完结
Studies on the Influences of i-GaN, n-GaN, p-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors
1个月前
已完结
Current-voltage characteristics of GaN and AlGaN p-i-n diodes
1个月前
已完结
A Near Ideal Edge Termination Technique for 4500V 4H-SiC Devices: The Hybrid Junction Termination Extension
1个月前
已完结
Ultrahigh-voltage SiC devices for future power infrastructure
1个月前
已完结
Area-Efficient Bevel-Edge Termination Techniques for SiC High-Voltage Devices
1个月前
已完结
1 kV vertical Al0.51Ga0.49N power Schottky diodes
2个月前
已关闭
Low leakage fully-vertical GaN-on-Si power MOSFETs
2个月前
已完结
皖公网安备34019202002308
