Lv21
140 积分 2021-12-24 加入
Impact of a thin AlN buffer layer on the characteristics of GaN high electron mobility transistors on a silicon substrate
36分钟前
已完结
Evolution of crystal quality and stress in MOVPE GaN-on-Si (111) induced by AlN interlayers
54分钟前
已完结
High Performance AlN/GaN/AlN/GaN Double Channel Fin-HEMT For Ka-band Low Voltage Wireless Communication Applications
1小时前
已关闭
High-Efficiency AlN/GaN HEMTs With High-Quality Stacked Gate Dielectrics on Si Substrate for K-and Ka-Band Applications
2个月前
已关闭
Demonstration of Ultra Low 2DEG Sheet Resistance Using Al-Enriched AlGaN Layer in the AlXGa1-XN/AlN/GaN Heterojunction
3个月前
已完结
InAlN/GaN-on-Si HEMTs with an InGaN Back Barrier for mm-Wave Applications
3个月前
已完结
InAlN/GaN-on-Si HEMTs with an InGaN Back Barrier for mm-Wave Applications
3个月前
已关闭
InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850 °C by MOVPE
3个月前
已完结
InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850 °C by MOVPE
3个月前
已关闭
The electrical characteristic and trapping effect of AlGaN/GaN HEMTs with Fe and Fe/C co-doped GaN buffer layer
4个月前
已完结
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