Lv1
48 积分 2021-12-24 加入
Thick-AlN-barrier AlN/GaN-based HEMTs with superior power and noise performance for low-voltage RF front-end applications
17小时前
已完结
Thermal resistance optimization of GaN-on-Si materials for RF HEMTs based on structure function method and static-pulsed I–V measurements
26天前
已完结
Thermal Performance of GaN Power Transistors on Sapphire Substrate
1个月前
已完结
Study on geometry-dependent n+-InGaN regrowth via MOCVD for AlN/GaN ohmic contact application
1个月前
已完结
Study on geometry-dependent n+-InGaN regrowth via MOCVD for AlN/GaN ohmic contact application
1个月前
已关闭
Millimeter-Wave AlGaN/GaN HEMTs on Si Operated at 12V and its modeling for 5G Handset Applications
1个月前
已完结
High Performance CMOS-Compatible RF GaN-on-Silicon HEMTs With Low-Resistive and Highly-Conformal Ohmic Contacts
1个月前
已完结
An enhanced dry-wet hybrid cyclic etching method for high resistance Si (111) based AlInGaN/GaN heterojunction epitaxy: comparison on various etching process
1个月前
已完结
Radio-Frequency GaN-on-Si HEMT Technology for Future Communication Applications (Invited)
1个月前
已完结
30nm Channel-Length Enhancement-Mode GaN MOSHEMT Transistors on a 300mm GaN-on-TRSOI Engineered Substrate
2个月前
已完结
皖公网安备34019202002308
