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Sue kong
Lv1
40 积分
2021-12-24 加入
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Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐Free AlGaN/GaN Heterostructures
16天前
已完结
Structural, optical, and electrical characterization and performance comparison of AlGaN/GaN HEMT structures with different buffer layers
17天前
已完结
Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistors with AlN Buffer on SiC Substrate at 3.5 GHz
17天前
已完结
31 W/mm at 8 GHz in InAlGaN/GaN HEMT With Thermal CVD SiNx Passivation
17天前
已完结
Effects on RF Performance for AlGaN/GaN HEMT on Si Substrate with AlGaN Buffer Engineering
17天前
已完结
High Performance mm Wave AlN/GaN MISHEMTs on 200 mm Si Substrate
2个月前
已完结
6.6W/mm 200mm CMOS compatible AlN/GaN/Si MIS-HEMT with in-situ SiN gate dielectric and low temperature ohmic contacts
2个月前
已完结
Record Power Performance of 33.1 W/mm with 62.9% PAE at X-band and 14.4 W/mm at Ka-band from AlGaN/GaN/AlN:Fe Heterostucture
2个月前
已完结
1200V E-mode GaN Monolithic Integration Platform on Sapphire with Ultra-thin Buffer Technology
2个月前
已完结
Demonstration of 1200-V E-mode GaN-on-Sapphire Power Transistor with Low Dynamic ON-Resistance Based on Active Passivation Technique
2个月前
已完结
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帮大忙了
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感谢,点赞
2个月前
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感谢,速度真快
2个月前
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2个月前
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