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42 积分 2021-12-24 加入
High Linearity and Low RF Loss GaN-on-Si Substrates Achieved Through Interface Engineering
19小时前
已完结
Applications of Oxygen Inserted Silicon Devices in Power and RF: (invited)
20小时前
已完结
CMOS-Compatible 200 mm 0.25 µm GaN-on-Si HEMT Process for FR3 Application
11天前
已完结
CMOS-Compatible 200 mm 0.25 µm GaN-on-Si HEMT Process for FR3 Application
11天前
已完结
GaN-on-Si HEMTs for Low Voltage FR2 Applications Enabled by Reactive-Sputtered n++-GaN Ohmic Contacts
12天前
已完结
Optimization Factors for the Thermal Design of Packaged GaN High-Electron-Mobility Transistors
1个月前
已完结
AlN/GaN MISHEMTs on Si with in-situ SiN as a gate dielectric for power amplifiers in mobile SoCs
1个月前
已完结
Impact of n-GaN cap layer doping on the gate leakage behavior in AlGaN/GaN HEMTs grown on Si and GaN substrates
1个月前
已完结
Electron mobility enhancement in metalorganic-vapor-phase-epitaxy-grown InAlN high-electron-mobility transistors by control of surface morphology of spacer layer
1个月前
已完结
Suppression of gate leakage current in in-situ grown AlN/InAlN/AlN/GaN heterostructures based on the control of internal polarization fields
1个月前
已完结
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