Lv21
112 积分 2021-12-24 加入
High-Efficiency AlN/GaN HEMTs With High-Quality Stacked Gate Dielectrics on Si Substrate for K-and Ka-Band Applications
1个月前
已关闭
Demonstration of Ultra Low 2DEG Sheet Resistance Using Al-Enriched AlGaN Layer in the AlXGa1-XN/AlN/GaN Heterojunction
1个月前
已完结
InAlN/GaN-on-Si HEMTs with an InGaN Back Barrier for mm-Wave Applications
1个月前
已完结
InAlN/GaN-on-Si HEMTs with an InGaN Back Barrier for mm-Wave Applications
2个月前
已关闭
InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850 °C by MOVPE
2个月前
已完结
InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850 °C by MOVPE
2个月前
已关闭
The electrical characteristic and trapping effect of AlGaN/GaN HEMTs with Fe and Fe/C co-doped GaN buffer layer
2个月前
已完结
An AlN/AlxGa1-xN/GaN graded channel HEMT with enhanced power and linearity performance
2个月前
已完结
Physical Insights into High Current Collapse under ON-state Stress in RF GaN HEMTs
2个月前
已完结
Critical Role of Holes in Reliability, Robustness and Stability of GaN-on-Si HEMTs for Power and RF Applications
2个月前
已完结
皖公网安备34019202002308
