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70 积分 2025-03-26 加入
Subthreshold and turn-on characteristics in Schottky-type p-GaN Gate HEMTs: impact of partially and fully depleted p-GaN layer
1小时前
已完结
Rapid Electrical Detection of Hg(II) Ions with AlGaN/GaN High Electron Mobility Transistors
3个月前
已完结
High Performance GaN PCT-SBD Temperature Sensors by Decreasing the Density of Nitrogen Vacancies in the AlGaN Layer
10个月前
已完结
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