Lv11
50 积分 2026-05-25 加入
First direct observation of the built-in electric field and oxygen vacancy migration in ferroelectric Hf0.5Zr0.5O2 film during electrical cycling
3小时前
已完结
A Novel High-Endurance FeFET Memory Device Based on ZrO2 Anti-Ferroelectric and IGZO Channel
4小时前
已关闭
Hybrid-FE-Layer FeFET With High Linearity and Endurance Toward On-Chip CIM by Array Demonstration
4小时前
已关闭
Vertical Leakage and Back-Gating Characteristics of GaN HEMTs Based on GaN/AlN Epitaxy on Off-Axis Conducting 4H-SiC
3天前
已完结
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