Lv31
300 积分 2025-01-11 加入
Study of Dopant Activation in Arsenic-Implanted Laser Annealed Si By Differential Hall Effect Metrology (DHEM)
14小时前
待确认
Source/Drain Extension Doping Engineering for Variability Suppression and Performance Enhancement in 3-nm Node FinFETs
14小时前
已完结
Flash-Assisted Flash Lamp Annealing Technology for High (Re-)Activation of Epitaxial Si:P Layers
14小时前
待确认
(Invited) Activation and Deactivation in Ultra-Highly Doped n-Type Epitaxy for nMOS Applications
14小时前
已完结
Investigation of Arsenic Transient Enhanced Diffusion From Emitter Process at 550 °C Si:As RP-CVD Epitaxy Using Disilane Precursor
14小时前
已完结
Source/Drain Epitaxy and Contacts for CFET Applications
1个月前
已完结
Investigation of Low Temperature SiP Epitaxy on 300 mm Si Substrate
2个月前
已关闭
Investigation of Arsenic Transient Enhanced Diffusion From Emitter Process at 550 °C Si:As RP-CVD Epitaxy Using Disilane Precursor
2个月前
已完结
Low temperature epitaxial SiGe:P for gate-all-around n-channel metal-oxide-semiconductor devices
2个月前
已完结
Low temperature source/drain epitaxy and functional silicides: essentials for ultimate contact scaling
2个月前
已完结
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