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246 积分 2024-01-28 加入
Memory technology trend and future challenges
6天前
已完结
Memory technology trend and future challenges
6天前
已完结
Oxide-Semiconductor Channel Transistor DRAM (OCTRAM) with 4F2 Architecture
6天前
已完结
A Multi-WL Approach to Suppress Gate-Induced Drain Leakage, Floating Body Effect, and Row Hammer Effect in Array Transistor of 4F2 DRAM and 3D Stackable DRAM
6天前
已完结
Reliability Characterization of HBM featuring HK+MG Logic Chip with Multi-stacked DRAMs
9天前
已完结
FinFETs with Thermally Stable RMG Gate Stack for Future DRAM Peripheral Circuits
9天前
已完结
Integration of High-k Metal Gate (HKMG) to Core/Peri Transistors of DRAM Addressing Reliability Issues
9天前
已完结
Cost Effective FinFET Platform for Stand Alone DRAM 1Y and Beyond Memory Periphery
10天前
已完结
Gate oxide technology relieving word-line break in 10 nm-class DRAMs
10天前
已完结
Improvement of VRT immunity using low 10-boron word line in recent DRAM
10天前
已关闭
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