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449 积分 2024-01-28 加入
A Three Dimensional DRAM (3D DRAM) Technology for the Next Decades
15小时前
已完结
Investigation of refresh characteristics in 4F2 vertical DRAM cells for sub-10 nm era
4天前
已关闭
Demonstration of 2T1C 3D-DRAM with IGZO Vertical Channel Access Transistors for BEOL Monolithic Multi-Deck Stacking
4天前
已完结
Enhancing 3D DRAM Double-Gate Device Performance by Leveraging the Floating Body Effect
19天前
已完结
Reliability Challenges and Aging Behavior in a TSV-Based 3D-Stacked DRAM I/O Interface
25天前
已关闭
First Thorough Assessment of Time-Dependent Dielectric Breakdown in Sub-25 nm Gate-All-Around Vertical Ingazno Transistor for 4F2 DRAM Application
25天前
已关闭
Oxide TFT Integration for DRAM Cell Transistor Applications
25天前
已关闭
In-Ga-Zn-O Vertical Transistor Technology for the New Type of 4F2 DRAM Application
25天前
已关闭
Understanding the Floating-Body Effect Simulation and Optimization in 3D-DRAMs
25天前
已关闭
Capacitor-Coupled Offset-Canceled DRAM Sense Amplifier With Ultralow Offset Voltage and Hidden Cancellation Time
1个月前
已完结