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192 积分 2023-09-15 加入
Performance Upper Limit of sub-10 nm Monolayer MoS2 Transistors
1个月前
已完结
Physical and chemical tuning of two-dimensional transition metal dichalcogenides
2个月前
已完结
Unlocking performance potential of two-dimensional SnS2 transistors with solution-processed high-k Y:HfO2 film and semimetal bismuth contact
2个月前
已完结
First-principles electron transport with phonon coupling: Large scale at low cost
2个月前
已完结
Recent Experimental Breakthroughs on 2D Transistors: Approaching the Theoretical Limit
2个月前
已完结
Pressure-Driven Metallicity in Ångström-Thickness 2D Bismuth and Layer-Selective Ohmic Contact to MoS2
2个月前
已完结
Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering
2个月前
已完结
Ab-Initio Simulation of van der Waals MoTe2–SnS2 Heterotunneling FETs for Low-Power Electronics
2个月前
已完结
A promising channel material for sub-5-nm-gate homogeneous CMOS devices
2个月前
已完结
Symmetric and Excellent Scaling Behavior in Ultrathin n- and p-Type Gate-All-Around InAs Nanowire Transistors
2个月前
已完结
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