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40 积分 2024-12-26 加入
Two-dimensional-materials-based transistors using hexagonal boron nitride dielectrics and metal gate electrodes with high cohesive energy
7个月前
已完结
Critical challenges in the development of electronics based on two-dimensional transition metal dichalcogenides
7个月前
已完结
Ultraflat single-crystal hexagonal boron nitride for wafer-scale integration of a 2D-compatible high-κ metal gate
7个月前
已完结
Integration of high-κ native oxides of gallium for two-dimensional transistors
7个月前
已完结
Single-crystalline metal-oxide dielectrics for top-gate 2D transistors
7个月前
已完结
High-κ monocrystalline dielectrics for low-power two-dimensional electronics
7个月前
已完结
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