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38 积分 2025-10-11 加入
Study of Vertical Ga 2 O 3 FinFET Short Circuit Ruggedness using Robust TCAD Simulation
12小时前
已完结
Prediction of anisotropic short circuit robustness of vertical β-Ga₂O₃ MOSFET
12小时前
求助中
Thermal boundary resistance
2天前
已完结
Impact of pulse operation conditions on the transient temperature distribution of GaN HEMTs via Raman thermometry operando analysis
1个月前
已完结
AlGaN/GaN HEMTs-an overview of device operation and applications
1个月前
已完结
Single-layer MoS2 transistors
1个月前
已完结
A Physics-Based Compact Electrothermal Model of β-Ga2O3 MOSFETs for Device-Circuit Co-Design
5个月前
已完结
Cahill, D. G., Braun, P. V., Chen, G., Clarke, D. R., Fan, S., Goodson, K. E., … & Shi, L. “Nanoscale thermal transport. II. 2003–2012”, Applied Physics Reviews, 1, 011305 (2014)
5个月前
已完结
T. Kim, S. Park, C. Song, et al., Fundamental conduction cooling limits for sub-1 μ m Ga 2 O 3 devices integrated with diamond, Int. J. Heat Mass Tran. 191 (2022) 122864,
6个月前
已关闭
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