Lv11
48 积分 2026-03-22 加入
Improved Graded Barrier/Buffer Double-Channel GaN HEMT for High-Power RF Applications
9小时前
待确认
Charge Balance Design of 1200-V E-Mode p-GaN Gate HEMT Toward Enhanced Breakdown Voltage and Dynamic Stability
9小时前
已完结
Engineering Extrinsic Resistance of E-Mode GaN p-FET Towards Enhanced Current Density
1个月前
已完结
A Sub-20 mV V TH Hysteresis Enhancement-Mode GaN p -FET With PEALD AlON Gate Dielectric
1个月前
已完结
Design and Development of High-Current E-mode GaN p-FET and Complementary Logic Circuits on UID-GaN/AlGaN Platform
1个月前
已完结
High-Current E-Mode InGaN/GaN p-FET on p-GaN Gate HEMT Platform
1个月前
已完结
Normally-Off HEMT-Based Bipolar p-FET With Enhanced Conduction Capability
2个月前
已完结
High-Performance Enhancement-Mode GaN p-FET Fabricated With an Etch-Stop Process
2个月前
已完结
High ION/IOFF Ratio > 105 Ag-Gated E-Mode GaN p-FETs Enabled by p++-GaN Contact and Polarization-Enhanced AlN Layer
3个月前
已完结
Development of Enhancement-Mode GaN p-FET With Post-Etch Wet Treatment on p-GaN Gate HEMT Epi-Wafer
3个月前
已完结
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