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70 积分 2026-03-22 加入
Normally-Off HEMT-Based Bipolar p-FET With Enhanced Conduction Capability
10小时前
待确认
High-Performance Enhancement-Mode GaN p-FET Fabricated With an Etch-Stop Process
10小时前
已完结
High ION/IOFF Ratio > 105 Ag-Gated E-Mode GaN p-FETs Enabled by p++-GaN Contact and Polarization-Enhanced AlN Layer
1个月前
已完结
Development of Enhancement-Mode GaN p-FET With Post-Etch Wet Treatment on p-GaN Gate HEMT Epi-Wafer
1个月前
已完结
High-Performance Enhancement-Mode GaN p-FET Fabricated With an Etch-Stop Process
1个月前
已完结
Enhancement-mode GaN p-FET with p-NiO/p-GaN heterojunction gate featuring improved threshold voltage stability and channel conductivity based on low interface trap density
1个月前
已关闭
Formation of low-resistance transparent Ni/Au ohmic contacts to a polarization field-induced p-InGaN/GaN superlattice
2个月前
已完结
Methods to achieve Ohmic contact to p-GaN
2个月前
已完结
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