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30 积分 2023-09-30 加入
Influence of carrier overflow on the forward-voltage characteristics of InGaN-based light-emitting diodes
7小时前
待确认
Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission
10小时前
已完结
Growth mode modulation and crystalline quality improvement of highly relaxed n-Al0.6Ga0.4N on high-temperature-annealing AlN/sapphire template via SiH4-pretreatment
1个月前
已完结
Highly efficient GaN-based light emitting diodes with micropits
2个月前
已完结
Low-temperature growth of n ++-GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light emitting diodes
4个月前
已完结
Nucleation mechanism of GaN growth on wet etched pattern sapphire substrates
4个月前
已完结
Effect of InAlGaN Interlayers on the Efficiency of InGaN-Based Red Light-Emitting Diodes
7个月前
已完结
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