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30 积分 2025-06-21 加入
Improved interface and electrical properties of atomic layer deposited Al2O3/4H-SiC
7个月前
已关闭
Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC
7个月前
已完结
MOS structure with as-deposited ALD Al2O3/4H-SiC heterostructure with high electrical performance: Investigation of the interfacial region
7个月前
已完结
Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
7个月前
已完结
High-κ Oxide Charge Engineering on GaN for Normally Off HEMTs
7个月前
已完结
Normally-off AlGaN/AlN/GaN HEMT with a composite recessed gate
7个月前
已完结
Normally-off AlGaN/AlN/GaN HEMT with a composite recessed gate
7个月前
已完结
Impact of Substrate Biasing During AlN Growth by PEALD on Al2O3/AlN/GaN MOS Capacitors
8个月前
已完结
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