Lv11
10 积分 2025-04-03 加入
Carrier lifetime and breakdown phenomena in SiC power device material
2小时前
待确认
Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC
3小时前
已完结
Optical and electrical studies on the TS defect in 4H-SiC
3小时前
已完结
Carrier lifetime and breakdown phenomena in SiC power device material
3小时前
已完结
Doping-dependent nucleation of basal plane dislocations in 4H-SiC
3小时前
已完结
Determination of Work Function for p- and n-Type 4H-SiC Single Crystals via Scanning Kelvin Probe Force Microscopy
11天前
已完结
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