Lv3
270 积分 2023-09-19 加入
Origins and characterization techniques of stress in SiC crystals: A review
6天前
已完结
Incorporation mechanism of N, Al, and B impurities in chemical vapor deposition of SiC
21天前
已完结
Impurities and defects in 4H silicon carbide
21天前
已完结
Influence of Nitrogen Concentrations on the Lattice Constants and Resistivities of n-Type 4H-SiC Single Crystals
1个月前
已完结
Research progress of large size SiC single crystal materials and devices
1个月前
已完结
Filtering and Interfacial Interaction Mechanism of TaC for Carbon Inclusions Suppression in PVT-Grown SiC Crystals
1个月前
已完结
Stacking fault energy of 6H-SiC and 4H-SiC single crystals
1个月前
已完结
TEM analysis of planar defects in β-SiC
1个月前
已完结
砷化镓材料技术发展及需求
5个月前
已完结
6英寸LEC半绝缘砷化镓单晶材料研制
5个月前
已完结
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