Lv3
224 积分 2023-09-19 加入
Investigation of Photoluminescence Black Features in 4H‐SiC Substrates
21小时前
已完结
High-resolution characterization of nitrogen doping concentration uniformity in n-type 4H-SiC wafers based on near-ultraviolet photoluminescence
1天前
已完结
Dislocation defects in 4H‑SiC crystals grown by physical vapor transport: Evolution, origins, and control strategies
1天前
已完结
Review of SiC crystal growth technology
1个月前
已完结
Polytype stability and defects in differently doped bulk SiC
2个月前
已完结
碳化硅晶体中异质包裹物与微管道缺陷的关系
2个月前
已完结
Interface kinetic engineering of heavily N-doped 4H-SiC: From surface step dynamics to polytype stability
2个月前
已完结
A Study of Nitrogen Incorporation in PVT Growth of n+ 4H SiC
3个月前
已完结
Improvement of the resistivity uniformity of 8-inch 4H–SiC wafers by optimizing the thermal field
3个月前
已完结
Comparison of resistivity distribution in p-type and n-type SiC single crystals grown by the PVT method
3个月前
已完结
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