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150 积分 2024-06-14 加入
Semiconductor saturable absorber mirror in the 3–5 µm mid-infrared region
2个月前
已完结
Mid-infrared photoluminescence revealing internal quantum efficiency enhancement of type-I and type-II InAs core/shell nanowires
2个月前
已完结
Hybrid metal/Ga2O3/GaN ultraviolet detector for obtaining low dark current and high responsivity
2个月前
已关闭
pBn type short-wavelength infrared photodetector with ultralow dark current and extended wavelength based on strained InGaAs/GaAsSb superlattice
2个月前
已完结
pBn type short-wavelength infrared photodetector with an ultralow dark current and extended wavelength based on a strained InGaAs/GaAsSb superlattice
2个月前
已完结
Performance enhancement of an N-polar nitride deep-ultraviolet light-emitting diode with compositionally graded p-AlGaN
2个月前
已完结
Room temperature continuous-wave operated 2.0-W GaN-based ultraviolet laser diodes
2个月前
已完结
Modeling and Simulation of MWIR InAs/GaSb Superlattice PIN and PBIN Detectors
2个月前
已完结
Higher operating temperature photoresponse of MWIR T2SLs InAs/InAsSb photodetector
2个月前
已完结
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