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20 积分 2024-11-03 加入
E-mode AlGaN/GaN HEMT with ScAlN/ScN charge trap-coupled ferroelectric gate stacks
11小时前
待确认
GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation
11小时前
已完结
Gate leakage mechanisms in normally off p-GaN/AlGaN/GaN high electron mobility transistors
14天前
已完结
Impact of negative gate stress on the reliability of p-GaN gate HEMT devices under dynamic switching operation
1个月前
已完结
Partial-to-fully oxidized spectrum of Ti3C2T x MXene-derived TiO2 free-standing films for nonvolatile high endurance memristive data storage
1个月前
已完结
Molecular Reconfiguration of Disordered Tellurium Oxide Transistors with Biomimetic Spectral Selectivity
5个月前
已完结
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