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80 积分 2024-11-03 加入
Characterization of hole traps in reverse-biased Schottky-type p-GaN gate HEMTs by current-transient method
2个月前
已完结
Review of quasi-2D CaF 2 materials: from synthesis and properties to device applications and future outlooks
2个月前
已完结
Ti/Al p-GaN Schottky barrier height determined by C–V measurements
2个月前
已完结
E-mode AlGaN/GaN HEMT with ScAlN/ScN charge trap-coupled ferroelectric gate stacks
3个月前
已完结
GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation
3个月前
已完结
Gate leakage mechanisms in normally off p-GaN/AlGaN/GaN high electron mobility transistors
4个月前
已完结
Impact of negative gate stress on the reliability of p-GaN gate HEMT devices under dynamic switching operation
4个月前
已完结
Partial-to-fully oxidized spectrum of Ti3C2T x MXene-derived TiO2 free-standing films for nonvolatile high endurance memristive data storage
4个月前
已完结
Molecular Reconfiguration of Disordered Tellurium Oxide Transistors with Biomimetic Spectral Selectivity
8个月前
已完结
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