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40 积分 2026-07-10 加入
Threshold voltage instability in III-nitride heterostructure metal–insulator–semiconductor high-electron-mobility transistors: Characterization and interface engineering
4小时前
已完结
Split-p-GaN Gate HEMT With Suppressed Negative Vth Shift and Enhanced Robustness Against False Turn-On
4小时前
已完结
Degradation and Recovery of GaN HEMTs in Overvoltage Hard Switching Near Breakdown Voltage
5小时前
已完结
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