Lv3
340 积分 2025-07-01 加入
Gate structuring on n-type bilayer MoS2 field-effect transistors for ultrahigh current density
28天前
已完结
Quasi-non-volatile capacitorless DRAM based on ultralow-leakage edge-contact MoS2 transistors
28天前
已完结
Printed MoS2 memristive nanosheet networks for spiking neurons with multi-order complexity
29天前
已完结
High-performance p-type monolayer tungsten diselenide transistors, Nature Electronics, 2026
1个月前
已关闭
Novel channel-last integration of ALD MoS 2 into stacked channel FETs on 300mm wafers
1个月前
已关闭
Vertically grown metal nanosheets integrated with atomic-layer-deposited dielectrics for transistors with subnanometre capacitance-equivalent thicknesses
2个月前
已完结
Wafer-scale integration of single-crystalline molybdenum disulfide for flexible electronics using oxide dry transfer
2个月前
已完结
Transport signatures of gate-tunable topological phase transition in ultrathin β -Ag2Te
2个月前
已完结
Self-reconfigurable polarization perception in dual-anisotropy heterostructures for high-dimensional in-sensor computing
2个月前
已完结
Matter in ångström-scale two-dimensional confinement
3个月前
已完结
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