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38 积分 2026-03-06 加入
Growth and performance of n++ GaN cap layer for HEMTs applications
2天前
已完结
Balancing Threshold Voltage and On-Resistance of p-GaN Gate HEMTs via Mg Doping Engineering
1个月前
已完结
Enhancing thermal dissipation ability and electrical performance in GaN-on-GaN HEMTs through stepped-carbon buffer design
1个月前
已完结
Enhancement-mode GaN HEMTs: recent developments in device design and performance for high-power applications
1个月前
已完结
Enhancing the Forward Gate Bias Robustness in p‐GaN Gate High‐Electron‐Mobility Transistors through Doping Profile Engineering
2个月前
已完结
Enhancing the Forward Gate Bias Robustness in p‐GaN Gate High‐Electron‐Mobility Transistors through Doping Profile Engineering
2个月前
已完结
Novel In-Situ AlN/p-GaN Gate HEMTs With Threshold Voltage of 3.9 V and Maximum Applicable Gate Voltage of 12.1 V
6个月前
已完结
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