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372 积分 2025-09-08 加入
Achieving symmetric and excellent performance by reducing dimension: 1D GaN nanowire GAA transistors
11天前
已关闭
Impact of Contact Gating on Scaling of Monolayer 2D Transistors Using a Symmetric Dual-Gate Structure
27天前
已完结
Gate-All-Around GaN Nanowire FET as a Potential Transistor at 5 nm Technology for Low-Power Low-Voltage Applications
1个月前
已完结
High-Efficiency Photoelectric Detector Based on a p - n Homojunction of Monolayer Black Phosphorus
1个月前
已完结
Thermoelectric properties of five SnTe monolayer allotropes
2个月前
已完结
Exceptionally high hole mobilities in monolayer group-IV monochalcogenides GeTe and SnTe
2个月前
已完结
First-principles study of wrinkled SnTe monolayer as p-type thermoelectric material
2个月前
已完结
The next generation of gate-all-around transistors
2个月前
已完结
Vertical MoS2 transistors with sub-1-nm gate lengths
2个月前
已完结
Sub-5 nm Monolayer MoS2 Transistors toward Low-Power Devices
5个月前
已完结
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