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418 积分 2025-09-08 加入
Photonic and electronic properties of two-dimensional GaN monolayer and AA/AA′ stacked structures: First-principles and quantum transport simulations
3小时前
求助中
n- and p-type ohmic contacts at monolayer gallium nitride–metal interfaces
4小时前
已完结
Vertical MoS2 transistors with sub-1-nm gate lengths
12天前
已完结
Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
13天前
已完结
Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors
13天前
已完结
Monolithic Integrated GaN Complementary Logic Circuits Using AlON/Al2O3 Bilayer Gate Dielectric
14天前
已关闭
Sub-5 nm one-dimensional post-transition-metal monochalcogenide gate-all-around MOSFETs
16天前
已完结
Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials
1个月前
已完结
Theoretical simulation of negative differential transconductance in lateral quantum well nMOS devices
1个月前
已完结
SymFET: A proposed symmetric graphene tunneling field effect transistor
1个月前
已完结
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