Lv5
900 积分 2024-08-23 加入
Investigation of Vacuum Pumping and Gate Bias Stress Effects on Electrical Performance and Trap Characteristics in Bottom-Gated CNT FETs
1天前
待确认
High-performance enhancement-mode GaN-based p-FETs fabricated with O3-Al2O3/HfO2-stacked gate dielectric
1天前
待确认
Interface Charge Effects on 2-D Electron Gas in Vertical-Scaled Ultrathin-Barrier AlGaN/GaN Heterostructure
1天前
待确认
Suppression of interface states between nitride-based gate dielectrics and ultrathin-barrier AlGaN/GaN heterostructure with in situ remote plasma pretreatments
1天前
待确认
Insight into the suppression mechanism of bulk traps in Al2O3 gate dielectric and its effect on threshold voltage instability in Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors
1天前
待确认
Effective Suppression of Amorphous Ga2O and Related Deep Levels on the GaN Surface by High-Temperature Remote Plasma Pretreatments in GaN-Based Metal–Insulator–Semiconductor Electronic Devices
1天前
待确认
Suppression and characterization of interface states at low-pressure-chemical-vapor-deposited SiN /III-nitride heterostructures
1天前
待确认
Foundations of atomic layer deposition of HfO2 on carbon nanotubes: from process window verification to a comparative study on networked and aligned architectures
2天前
已完结
Dielectric and Passivation Layer Optimization in Carbon Nanotube Thin-Film Transistors for Display Driving Applications
10天前
已完结
Self-Anchoring Process to Construct Highly-Aligned-Carbon Nanotube Transistors
10天前
已完结
皖公网安备34019202002308
