Lv4
570 积分 2023-04-11 加入
Short-circuit protection circuit of SiC MOSFET based on drain-source voltage integral
2个月前
已完结
Fabrication and characteristics of a 4H-SiC junction barrier Schottky diode
2个月前
已完结
A 3.3 kV Silicon Carbide MOSFET Based Building Block for Medium-Voltage Ultra-Fast DC Chargers
2个月前
已完结
Voltage class Comparison of 3.3 kV SiC and 6.5 kV SiC Devices in the Application of HVDC Converters
2个月前
已完结
Induction frequency modulation for 4H-SiC growth: Thermal field evolution, dislocation suppression, and high-quality crystal preparation via PVT method
5个月前
已完结
Optimization of carbon transport and growth rates in top-seeded solution growth of Al-doped SiC
8个月前
已完结
Theoretical study on the improvement of the doping efficiency of Al in 4H-SiC by co-doping group-IVB elements
9个月前
已完结
Suppression of Inclusions in Solution Growth SiC Crystals from Cr–Si–Ce–Al Solvent
1年前
已完结
皖公网安备34019202002308
