Lv11
70 积分 2025-03-10 加入
First-principles calculations of the electronic structure and optical properties of β-Ga2O3 with various vacancy defects
3小时前
已完结
First Demonstration of a Gallium Oxide Power Converter
8天前
已完结
Nitrogen-doped Ga2O3 current blocking layer using MOCVD homoepitaxy for high-voltage and low-leakage Ga2O3 vertical device fabrication
5个月前
已完结
Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination
5个月前
已完结
Enhancement-mode β-Ga2O3 U-shaped gate trench vertical MOSFET realized by oxygen annealing
6个月前
已完结
A New 4H-SiC Trench MOSFET With Improved Reverse Conduction, Breakdown, and Switching Characteristics
7个月前
已完结
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