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60 积分 2023-08-30 加入
Introduction of charge-trapping Al2O3/Ta2O5/Al2O3 dielectric stack in AlGaN/GaN high electron mobility transistors for programmable threshold voltage
2个月前
已完结
GaN MOS-HEMT Using Ultra-Thin Al 2 O 3 Dielectric Grown by Atomic Layer Deposition
4个月前
已完结
Off-state leakage current reduction in AlGaN/GaN high electron mobility transistors by combining surface treatment and post-gate annealing
4个月前
已完结
Defect passivation and enhanced UV emission in β-Ga2O3 via remote fluorine plasma treatment
5个月前
已完结
Nano copper-modified GO and CNTs for enhanced the epoxy resin composite thermal properties
5个月前
已完结
High-performance AlGaN/GaN HEMTs with Hf0.5Zr0.5O2-based ferroelectric gate by pulsed laser deposition
6个月前
已完结
Reconfigurable Radio‐Frequency High‐Electron Mobility Transistors via Ferroelectric‐Based Gallium Nitride Heterostructure
7个月前
已完结
The unique carrier mobility of Janus MoSSe/GaN heterostructures
7个月前
已完结
Controlled ferroelectric switching in ultrawide bandgap AlN/ScAlN multilayers
8个月前
已完结
Progress of GaN-Based E-mode HEMTs
9个月前
已完结
Conformal Prediction for Time Series
6个月前
已采纳
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