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2023-08-30 加入
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Robustness of Ferroelectricity in Hafnium-Zirconium Dioxide Films Deposited By Sputtering and Chemical Solution Deposition for Ferroelectric Transistor Applications
13天前
已关闭
Enhancing AlGaN/GaN HEMT Performance through Gate-All-Around AlN Passivation: A Comparative Study with a Planar MIS-HEMT
2个月前
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Effect of SiN:H x passivation layer on the reverse gate leakage current in GaN HEMTs
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Recent Advances in GaN‐Based Power HEMT Devices
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Pulsed E-/D-Mode Switchable GaN HEMTs With a Ferroelectric AlScN Gate Dielectric
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Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT
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Integration of ferroelectrics with III-N transistors for high performance millimeter-wave applications
3个月前
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Achieving high-energy and high-safety lithium metal batteries with high-voltage-stable solid electrolytes
3个月前
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FeFET Memory Featuring Large Memory Window and Robust Endurance of Long-Pulse Cycling by Interface Engineering using High-k AlON
4个月前
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Characterization of Ferroelectric Characteristics for Hafnium Zirconium Oxide Capacitors with Refractory Electrodes
4个月前
已完结
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