Lv3
230 积分 2024-07-18 加入
Topological viewpoint of two-dimensional group III–V and IV–IV compounds in the presence of electric field and spin–orbit coupling by density functional theory and tight-binding model
1个月前
已关闭
Lateral spin filter realized by monolayer Fe3GaTe2 and Fe3GaTe2/Graphene van der Waals heterostructures
1个月前
已完结
Two-dimensional material/group-III nitride hetero-structures and devices
1个月前
已关闭
Metrics for spin-based computing
1个月前
已完结
Tunneling electroresistance effect and low ON-state resistance-area product in monolayer-In2Se3-based van der Waals ferroelectric tunnel junctions
1个月前
已完结
Achieving giant tunneling electroresistance ratio of up to 109% in sliding ferroelectric tunnel junctions based on MoGe2N4 bilayer
2个月前
已完结
Realizing tunneling electroresistance effect in the Au/h-BN/In2Se3/Au vertical ferroelectric tunnel junction
2个月前
已完结
Micromagnetics Simulation as a Supplement to and Diagnostic for Lorentz Transmission Electron Microscopy
2个月前
已关闭
All two-dimensional van der Waals magnetic tunneling junctions
2个月前
已完结
Nonvolatile spin logic-in-memory strategy by fully electrically multistate modulation in two-dimensional A-type antiferromagnets
4个月前
已完结
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