Lv11
30 积分 2025-06-25 加入
High Performance Split-Gate-Trench MOS Based on Radiation-Hardening Technology and Its Total-Ionizing-Dose Radiation Effects
5小时前
已完结
焊料层空洞面积对功率器件电阻和热阻的影响
6小时前
待确认
Above 48% Improvement of Wide SOA Enhancement Technology and Mechanism for 30-V SGT MOSFET on Application of Hot-Swap
4个月前
已完结
Behavior of Split-Gate Trench MOSFETs in Critical Conditions Caused by Distributed Effects
4个月前
已完结
The Design of a 4H-SiC SGT MOSFET
4个月前
已完结
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