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124 积分 2024-08-22 加入
Influences of excitation power and temperature on photoluminescence in phase-separated InGaN quantum wells
1个月前
已完结
Enhancement in light-emission efficiency of InGaN/GaN multiple quantum well layer by a porous-GaN mirror
2个月前
已完结
24% Single‐Junction GaAs Solar Cell Grown Directly on Growth‐Planarized Facets Using Hydride Vapor Phase Epitaxy
2个月前
已完结
Pd-mediated mechanical stack of III–V solar cells fabricated via hydride vapor phase epitaxy
2个月前
已完结
SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATES
3个月前
已完结
Novel metalorganic chemical vapor deposition system for GaN growth
4个月前
已完结
Advancing gallium nitride LED technology: principles, challenges, and future directions
4个月前
已完结
Recent progresses on InGaN red micro-LEDs for display
4个月前
已完结
Preparation and application of advanced nanoporous GaN materials
4个月前
已完结
Study of carrier diffusion in InGaN/GaN quantum wells: Impact of quantum well thickness and substrate type
5个月前
已完结