Lv31
280 积分 2025-03-10 加入
Optical, electrical, and chemical characterization of nanostructured InxGa1-xN formed by high fluence In+ ion implantation into GaN
9天前
已完结
Study of the surface chemistry, surface morphology, optical, and structural properties of InGaN thin films deposited by RF magnetron sputtering
12天前
已完结
Effects of defect concentration on ferromagnetism in Xe-irradiated GaN films
25天前
已完结
Review—Radiation Damage in Wide and Ultra-Wide Bandgap Semiconductors
1个月前
已完结
Ionizing radiation defects and reliability of Gallium Nitride-based III-V semiconductor devices: A comprehensive review
2个月前
已完结
MD simulation of two-temperature model in ion irradiation of 3C-SiC: Effects of electronic and nuclear stopping coupling, ion energy and crystal orientation
2个月前
已完结
Atomic displacement threshold energies and defect generation in GaN, AlN, and AlGaN: A high-throughput molecular dynamics investigation
4个月前
已完结
Effects of radiation damage on GaN epitaxial layer arising from argon ion implantation for edge termination
5个月前
已关闭
Role of position specific Ga and N vacancy related defects by ion irradiation in tailoring the ferromagnetic properties of thin GaN films: An experimental and first principle-based study
6个月前
已完结
Dislocation-assisted electron and hole transport in GaN epitaxial layers
6个月前
已完结
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