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388 积分 2025-05-22 加入
The impact of buffer thickness upon the transport-limited buffer trapping effects in carbon-doped power GaN-on-Si devices
4天前
已完结
900-V active-passivation p-GaN gate HEMT with suppressed floating Si substrate induced back-gating effect
14天前
已完结
Simulation design of high Baliga's figure of merit normally-off P GaN gate AlGaN/GaN heterostructure field effect transistors with junction field plates
14天前
已完结
Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs
27天前
已完结
Trap-assisted degradation mechanisms in E-mode p-GaN power HEMT: A review
27天前
已完结
Theory of Tunneling
1个月前
已完结
A review of dynamic effects, reliability and mitigation techniques of AlGaN/GaN HEMTs
1个月前
已完结
Reducing dynamic-RON and ΔVTH in GaN E-mode HEMTs by integrating p+-GaN/p-InGaN/p-GaN composite gate with gate termination extension: Simulation evidence
1个月前
已完结
Dynamic instabilities in GaN power devices: mechanisms, challenges and advancements
1个月前
已完结
Enhanced Performance of Normally-OFF GaN HEMTs with Stair-shaped p-GaN Cap Layer
5个月前
已完结
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