Lv11
40 积分 2025-05-22 加入
Charge control and mobility in AlGaN/GaN transistors: Experimental and theoretical studies
5小时前
待确认
Instability of parasitic capacitance in T-shape-gate enhancement-mode AlGaN/GaN MIS-HEMTs
13天前
已完结
Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures
13天前
已完结
Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors
25天前
已完结
Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors
1个月前
已完结
Spin-filter tunneling detection of antiferromagnetic resonance with electrically-tunable damping
1个月前
已完结
2.57GW/cm2 normally-off composite stepped gate GaN-based HEMT with p-GaN buried layer and field plate
1个月前
已完结
Normally off GaN-based HEMT featuring a composite structure incorporating a buried p-GaN layer and a charge balancing plate
1个月前
已完结
Normally-off AlGaN/AlN/GaN HEMT with a composite recessed gate
1个月前
已完结
Design Optimization of Wide-Gate Swing E-Mode GaN HEMTs with Junction Barrier Schottky Gate
5个月前
已完结
皖公网安备34019202002308
