Lv11
30 积分 2025-05-22 加入
2.57GW/cm2 normally-off composite stepped gate GaN-based HEMT with p-GaN buried layer and field plate
1小时前
待确认
Normally off GaN-based HEMT featuring a composite structure incorporating a buried p-GaN layer and a charge balancing plate
1小时前
已完结
Normally-off AlGaN/AlN/GaN HEMT with a composite recessed gate
3小时前
已完结
Design Optimization of Wide-Gate Swing E-Mode GaN HEMTs with Junction Barrier Schottky Gate
3个月前
已完结
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