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770 积分 2026-03-04 加入
Thermally stable GaN RF HEMTs on proton irradiated GaN substrates for low-noise applications
27天前
已关闭
Over 80% power-added-efficiency GaN high-electron-mobility transistors on free-standing GaN substrates
2个月前
已完结
The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices
2个月前
已完结
Control of unintentional oxygen incorporation in GaN
2个月前
已完结
Cleaning of AlN and GaN surfaces
2个月前
已完结
Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance
3个月前
已完结
SOI CMOS TRANSISTORS FOR RF AND MICROWAVE APPLICATIONS
4个月前
已完结
A New Approach for SOI Devices Small-Signal Parameters Extraction
5个月前
已完结
The annealing treatment of interface states in planar and recessed-anode AlGaN/GaN Schottky barrier diodes
5个月前
已完结
Top-down fabrication of AlGaN/GaN nanoribbons
5个月前
已完结
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