Lv3
376 积分 2024-10-17 加入
First-principles exploration of alternative gate dielectrics: Electronic structure ofZrO2/SiandZrSiO4/Siinterfaces
10小时前
已完结
Atomic structure and band alignment at Al2O3/GaN, Sc2O3/GaN and La2O3/GaN interfaces: A first-principles study
11小时前
已完结
Structural and electronic properties of an abrupt4H−SiC(0001)∕SiO2interface model: Classical molecular dynamics simulations and density functional calculations
11小时前
已完结
Theoretical and experimental investigation of optical absorption anisotropy in β-Ga2O3
2天前
已完结
Band alignment at surfaces and heterointerfaces ofAl2O3,Ga2O3,In2O3, and related group-III oxide polymorphs: A first-principles study
3天前
已完结
Theoretical insights into β-Ga2O3/diamond heterojunction interfaces: Surface selection, band alignment, and interfacial interaction
8天前
已完结
Chemical bonding and band alignment at X2O3/GaN (X = Al, Sc) interfaces
9天前
已完结
Bonding principles of passivation mechanism at III-V-oxide interfaces
9天前
已完结
Theoretical insights into β-Ga2O3/diamond heterojunction interfaces: Surface selection, band alignment, and interfacial interaction
11天前
已完结
Density functional descriptions of interfacial electronic structure
11天前
已关闭
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