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58 积分 2025-01-09 加入
High-efficiency all fluorescence white OLEDs with high color rendering index by manipulating excitons in co-host recombination layers
9天前
已完结
High-performance extended SWIR photodetectors using strain compensated InGaAs/GaAsSb type-II quantum wells
10天前
已完结
Highly-efficient (>70%) and Wide-spectral (400–1700 nm) sub-micron-thick InGaAs photodiodes for future high-resolution image sensors
11天前
已完结
InP-Based Broadband Photodetectors With InGaAs/GaAsSb Type-II Superlattice
15天前
已完结
T2SL/InP/T2SL pBp extended SWIR barriode with InGaAs/GaAsSb absorption material lattice matched to InP
15天前
已完结
The investigations to eliminate the bias dependency of quantum efficiency of InGaAsSb nBn photodetectors for extended short wavelength infrared detection
15天前
已完结
InGaAs/GaAsSb type-II quantum well photodetectors with quantum wells barrier layer for reducing dark current
1个月前
已完结
Study of In0.55Ga0.45As/GaAs0.15Sb0.85/In0.1Ga0.9As DQW heterostructure for designing IR-optoelectronic devices
1个月前
已完结
InP-based high-performance extended short wavelength p-B-n infrared photodetector with InGaAs/GaAsSb type-II superlattice absorption layer
1个月前
已完结
Temperature and pressure dependent tunable GaAsSb/InGaAs QW heterostructure for application in IR-photodetector
1个月前
已完结
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