Lv3
360 积分 2024-07-29 加入
In-Situ Boron Doped SiGe Epitaxy Optimization for FinFET Source/Drain
2个月前
已完结
Selective epitaxial growth of B-doped SiGe and HCl etch of Si for the formation of SiGe:B recessed source and drain (pMOS transistors)
2个月前
已完结
Boron diffusion in strained and strain-relaxed SiGe
2个月前
已完结
Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 14nm node FinFETs
2个月前
已完结
Effects on selective epitaxial growth of strained-SiGe p-MOSFETs on various (001) Si recess structures
2个月前
已完结
Selective Epitaxial Growth of SiGe(:B) for Advanced p-Type Fd-SOI
2个月前
已完结
High performance junctionless FDSOI SiGe channel p-FinFET with high ION/IOFF ratio and excellent SS
6个月前
已完结
Strain enhanced low-V<inf>T</inf> CMOS featuring La/Al-doped HfSiO/TaC and 10ps invertor delay
6个月前
已完结
Source/drain eSiGe engineering for FinFET technology
6个月前
已完结
Multiple SiGe/Si layers epitaxy and SiGe selective etching for vertically stacked DRAM
6个月前
已完结
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