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320 积分 2024-07-29 加入
Selective epitaxy growth of Si1−xGex layers for MOSFETs and FinFETs
29天前
已完结
Selective epitaxy growth of Si1−xGex layers for MOSFETs and FinFETs
1个月前
已完结
Strain measurement in FinFET structures with epitaxially grown SiGe on source/drain region by nano beam diffraction (NBD) method
1个月前
已关闭
Source/drain eSiGe engineering for FinFET technology
1个月前
已完结
A Comprehensive Study of SiGe Source/ Drain Local Stress by Nano Beam Diffraction
1个月前
已完结
Analytical Model of the Parasitic Bipolar Junction Transistor in Low-Doped Double-Gate FinFETs for Pass-Gate Circuits
1个月前
已完结
Evidence for Silicon Bandgap Narrowing in Uniaxially Strained MOSFETs Subjected to Tensile and Compressive Stress
1个月前
已完结
In-Situ Boron Doped SiGe Epitaxy Optimization for FinFET Source/Drain
6个月前
已完结
Selective epitaxial growth of B-doped SiGe and HCl etch of Si for the formation of SiGe:B recessed source and drain (pMOS transistors)
6个月前
已完结
Boron diffusion in strained and strain-relaxed SiGe
6个月前
已完结
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