Lv3
340 积分 2024-07-29 加入
Analytical Model of the Parasitic Bipolar Junction Transistor in Low-Doped Double-Gate FinFETs for Pass-Gate Circuits
5小时前
待确认
Evidence for Silicon Bandgap Narrowing in Uniaxially Strained MOSFETs Subjected to Tensile and Compressive Stress
5小时前
已完结
In-Situ Boron Doped SiGe Epitaxy Optimization for FinFET Source/Drain
4个月前
已完结
Selective epitaxial growth of B-doped SiGe and HCl etch of Si for the formation of SiGe:B recessed source and drain (pMOS transistors)
4个月前
已完结
Boron diffusion in strained and strain-relaxed SiGe
4个月前
已完结
Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 14nm node FinFETs
4个月前
已完结
Effects on selective epitaxial growth of strained-SiGe p-MOSFETs on various (001) Si recess structures
4个月前
已完结
Selective Epitaxial Growth of SiGe(:B) for Advanced p-Type Fd-SOI
4个月前
已完结
High performance junctionless FDSOI SiGe channel p-FinFET with high ION/IOFF ratio and excellent SS
8个月前
已完结
Strain enhanced low-V<inf>T</inf> CMOS featuring La/Al-doped HfSiO/TaC and 10ps invertor delay
8个月前
已完结
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