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392 积分 2024-07-22 加入
Sn composition graded GeSn photodetectors on Si substrate with cutoff wavelength of 3.3 μm for mid-infrared Si photonics
8小时前
待确认
GeSn p-i-n detectors integrated on Si with up to 4% Sn
1个月前
已完结
Design of Mid-Infrared Ge1-xSnx/Ge Heterojunction Photodetectors on GeSnOI Platform With a Bandwidth Exceeding 100 GHz
6个月前
已完结
Material-Device Simulations of High-Frequency Performances of n-type MOSFET with GeSn Channel
7个月前
已完结
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