Lv4
430 积分 2023-03-03 加入
Dynamic On-resistance Degradation Mechanism of 1200 V Enhancement-mode GaN Schottky-Gate HEMT Devices on the Si Substrates
4小时前
求助中
Recent progress on GaN-on-GaN technology for RF applications
4小时前
求助中
Recent progress and future prospects of THz quantum-cascade lasers
8天前
已完结
Design and Fabrication of AlN/GaN Heterostructures for Intersubband Technology
8天前
已完结
Design and Preparation of AlN/GaN Quantum Wells for Quantum Cascade Laser Applications
9天前
已完结
Hole mobility enhancement in high-Al-content p-type AlGaN via site-selective Mg doping
12天前
已完结
(Invited) Analyses of 2D Electron Transport at a GaAs/AlGaAs Interface
1个月前
已完结
TiN-based Au-free Ohmic contact on n-AlGaN and fabrication of high efficiency DUV-LEDs
1个月前
已关闭
Enhancing the p-type ohmic contact characteristics of deep ultraviolet light-emitting diodes through an Au sacrificial layer without deteriorating the reflectivity
1个月前
已关闭
Review on ultrathin-barrier AlGaN(<6 nm)/GaN enhancement-mode technology: concept, device fabrication, and integration prospects
1个月前
已完结
皖公网安备34019202002308
