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340 积分 2025-05-16 加入
Al0.68Sc0.32N/SiC-Based Metal-Ferroelectric-Semiconductor Capacitors Operating up to 1000 °C
2小时前
待确认
Fabrication of Ultrathin Ferroelectric Al0.7Sc0.3N Films under Complementary‐Metal‐Oxide‐Semiconductor Compatible Conditions by using HfN0.4 Electrode
2小时前
已完结
Thickness scaling down to 5 nm of ferroelectric ScAlN on CMOS compatible molybdenum grown by molecular beam epitaxy
2小时前
已完结
HfO2-based ferroelectrics for next-generation multi-level non-volatile memory: From fundamentals to prospects
14天前
已完结
6-Bit multilevel and highly linear synaptic plasticity in sputtered AlScN ferroelectric capacitors on (100) Si
16天前
已完结
Band offset between cubic boron nitride and nitrogen-plasma terminated boron-doped diamond (111)
28天前
已完结
AlScN: A III-V semiconductor based ferroelectric
1个月前
已完结
Evolution of pronounced ferroelectricity in Hf0.5Zr0.5O2thin films scaled down to 3 nm
1个月前
已完结
HfO2-based ferroelectric synaptic devices: challenges and engineering solutions
1个月前
已完结
Ultrafast Switching of Ferroelectric HfO2-ZrO2 Under Low Voltage With Layered Structure
1个月前
已完结
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