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368 积分 2025-05-16 加入
The Imprint Failure and Suppression of the Multi‐Level Memory in HfAlO x Ferroelectric Capacitor
14天前
已完结
Ferroelectric Al1‐xScxN Opposite State Retention Model Based on Switching Dynamics
17天前
已完结
Effect of N2-flow on nitrogen vacancies, leakage, and polarization switching in sputtered ferroelectric AlScN films
1个月前
已完结
Study of SiO2/4H-SiC interface nitridation by post-oxidation annealing in pure nitrogen gas
2个月前
已完结
Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3/GaN MOS Device
2个月前
已完结
Al0.68Sc0.32N/SiC-Based Metal-Ferroelectric-Semiconductor Capacitors Operating up to 1000 °C
3个月前
已完结
Fabrication of Ultrathin Ferroelectric Al0.7Sc0.3N Films under Complementary‐Metal‐Oxide‐Semiconductor Compatible Conditions by using HfN0.4 Electrode
3个月前
已完结
Thickness scaling down to 5 nm of ferroelectric ScAlN on CMOS compatible molybdenum grown by molecular beam epitaxy
3个月前
已完结
HfO2-based ferroelectrics for next-generation multi-level non-volatile memory: From fundamentals to prospects
4个月前
已完结
6-Bit multilevel and highly linear synaptic plasticity in sputtered AlScN ferroelectric capacitors on (100) Si
4个月前
已完结
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