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340 积分 2025-05-16 加入
AlScN: A III-V semiconductor based ferroelectric
10天前
已完结
Low-thermal-budget (300 °C) ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors realized using high-pressure annealing
1个月前
已完结
Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications
1个月前
已关闭
(Invited) Role of Oxidant Gas for Atomic Layer Deposition of HfxZr1−XO2 Thin Films on Ferroelectricity of Metal-Ferroelectric-Metal Capacitors
1个月前
已完结
The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model
1个月前
已完结
Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget
1个月前
已完结
Effects of high pressure oxygen annealing on Hf 0.5 Zr 0.5 O 2 ferroelectric device
1个月前
已完结
Ferroelectricity of HfxZr1−xO2 thin films fabricated by 300 °C low temperature process with plasma-enhanced atomic layer deposition
1个月前
已完结
Impact of Tetrakis(ethylmethylamino)-based precursor and oxygen source selection on atomic layer deposition of ferroelectric HfxZr1-xO2 thin films
1个月前
已关闭
Improvement in ferroelectricity of HfxZr1−xO2 thin films using top- and bottom-ZrO2 nucleation layers
2个月前
已完结
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