Lv31
250 积分 2025-01-07 加入
Analyzing extended wavelength InGaAs photodetectors: the effects of window and active layer thickness on optical characteristics
23天前
已完结
Avalanche photodiodes based on InAlAs/InGaAs heterostructures with sulfide–polyamide passivation of mesa structures
1个月前
已关闭
Ga(x)In(1-x)As, physical properties
1个月前
已完结
In(1-x-y)Al(x)Ga(y)As, physical properties
1个月前
已完结
ICP-RIE etching of InP using CH4/H2, CH4/H2/Cl2, H2/Cl2 and Cl2: process development and optimization
4个月前
已完结
Comparative Study of InGaAs and GaAsSb Nanowires for Room Temperature Operation of Avalanche Photodiodes at 1.55 {\mu}m
4个月前
已完结
Avalanche photodiode with ultrahigh gain–bandwidth product of 1,033 GHz
5个月前
已完结
Photocarrier distribution in an InGaAs/InP avalanche photodiodes and its contribution to device performances
5个月前
已完结
High-performance InGaAs/InAlAs single-photon avalanche diode with a triple-mesa structure for near-infrared photon detection
5个月前
已完结
Design of a room-temperature, sine-wave gated, InGaAs/InP SPAD based photon counting system with dead-time mitigation
5个月前
已完结
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