Lv6
2030 积分 2024-09-23 加入
A comparative study of threading dislocations in AlGaN/GaN heterostructures grown on Si substrates with different buffer structures
4天前
已完结
Internal Quantum Efficiency of Nitride-based Light-Emitting Diodes
7天前
已关闭
Low temperature absolute internal quantum efficiency of InGaN-based light-emitting diodes
15天前
已完结
A comparative study of photoluminescence internal quantum efficiency determination method in InGaN/GaN multi-quantum-wells
15天前
已完结
Study on Optical Properties and Internal Quantum Efficiency Measurement of GaN-based Green LEDs
15天前
已完结
Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes
15天前
已完结
Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes
15天前
已关闭
Determination of relative internal quantum efficiency in InGaN∕GaN quantum wells
17天前
已完结
GaN-based solar cells degradation kinetics investigated at high temperature under high-intensity 405nm optical stress
1个月前
已完结
Excitation Intensity and Temperature-Dependent Performance of InGaN/GaN Multiple Quantum Wells Photodetectors
1个月前
已完结
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