Lv11
64 积分 2023-11-16 加入
Reducing Stacking Faults in Highly Doped N-Type 4H-SiC Crystal
7小时前
已完结
Difference of double Shockley-type stacking faults expansion in highly nitrogen-doped and nitrogen-boron co-doped n-type 4H-SiC crystals
7小时前
已完结
Influence of crystal orientation and incident plane on n-type 4H-SiC wafer slicing by using picosecond laser
16天前
已完结
Machine learning assisted calibration of PVT simulations for SiC crystal growth
16天前
已完结
Effect of powder packing method on thermal field of SiC crystal grown by PVT method
16天前
已完结
Distribution of the electrical resistivity of a n-type 4H-SiC crystal
22天前
已完结
Single‐Crystal and Polycrystal SiC Bonding for Cost‐effective Chip Fabrication
29天前
已完结
Effects of the thermal field on the diameter enlargement of 200 mm SiC by PVT method
29天前
已完结
Is SiC a Predominant Technology for Future High Power Electronics?: A Critical Review
1个月前
已完结
Ultra-Thin, Ultra-Light, Rainbow-Free AR Glasses Based on Single-Layer Full-Color SiC Diffrcative Waveguide
1个月前
已完结
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