Lv11
44 积分 2023-11-16 加入
A Crucible Design for Growing p-Type SiC with Improved Release Uniformity of Al Source
1小时前
已完结
Comparison of Resistivity Distribution in P-type and N-type SiC Single Crystals Grown by the PVT Method
1小时前
已完结
Identification of dislocations in 4H-SiC epitaxial layers and substrates using photoluminescence imaging
1个月前
已完结
Amplified Detection of Threading Dislocations in n-Type 4H-SiC Epilayers Enabled by Time-Resolved Photoluminescence Mapping
1个月前
已完结
Theoretical investigation of the formation of basal plane stacking faults in heavily nitrogen-doped 4H-SiC crystals
2个月前
已完结
A study of nucleation at initial growth stage of SiC single crystal by physical vapor transport
2个月前
已完结
Two-photon-excited, three-dimensional photoluminescence imaging and dislocation-line analysis of threading dislocations in 4H-SiC
3个月前
已完结
Generation and propagation of dislocations during crystal growth
3个月前
已完结
Study of effects of varying parameters on the dislocation density in 200 mm SiC bulk growth
3个月前
已完结
Effect of subsurface damages in seed crystals on the crystal quality of 4H-SiC single crystals grown by the PVT technology
3个月前
已完结
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