Lv2
184 积分 2023-11-16 加入
Investigation of defect formation at the early stage of PVT-grown 4H-SiC crystals
30天前
已完结
Surface defects in 4H-SiC homoepitaxial layers
2个月前
已完结
Efficient thermal field optimization of PVT simulations for SiC single crystal growth
3个月前
已完结
Simulation Study of Carbon Vacancy Trapping Effect on Low Power 4H-SiC MOSFET Performance
4个月前
已完结
Nondestructive detection and identification of electrically active threading dislocations in n+-SiC substrates
4个月前
已完结
Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process
5个月前
已完结
Effect of cerium impurity on the stable growth of the 4H-SiC polytype by the physical vapour transport method
8个月前
已完结
Hydrogen etching of 4H–SiC(0001) facet and step formation
9个月前
已完结
Formation of basal plane stacking faults on the (0001¯) facet of heavily nitrogen-doped 4H-SiC single crystals during …
9个月前
已完结
Characterization and formation mechanism of short step-bunching defects on 4H-SiC thick homoepitaxial films
9个月前
已完结
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