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44 积分 2023-11-16 加入
Characterization and formation mechanism of short step-bunching defects on 4H-SiC thick homoepitaxial films
1天前
已完结
Influence of the growth conditions on the formation of macro-steps on the growth interface of SiC-Crystals
1天前
已完结
A Crucible Design for Growing p-Type SiC with Improved Release Uniformity of Al Source
1个月前
已完结
Comparison of Resistivity Distribution in P-type and N-type SiC Single Crystals Grown by the PVT Method
1个月前
已完结
Identification of dislocations in 4H-SiC epitaxial layers and substrates using photoluminescence imaging
3个月前
已完结
Amplified Detection of Threading Dislocations in n-Type 4H-SiC Epilayers Enabled by Time-Resolved Photoluminescence Mapping
3个月前
已完结
Theoretical investigation of the formation of basal plane stacking faults in heavily nitrogen-doped 4H-SiC crystals
4个月前
已完结
A study of nucleation at initial growth stage of SiC single crystal by physical vapor transport
4个月前
已完结
Two-photon-excited, three-dimensional photoluminescence imaging and dislocation-line analysis of threading dislocations in 4H-SiC
4个月前
已完结
Generation and propagation of dislocations during crystal growth
4个月前
已完结
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