Lv11
58 积分 2023-10-17 加入
Rigorous thermodynamic treatment of heat generation and conduction in semiconductor device modeling
1小时前
已完结
High-temperature operation of group-III nitride high-electron-mobility transistors
19天前
已完结
Theoretical insights into β-Ga2O3/diamond heterojunction interfaces: Surface selection, band alignment, and interfacial interaction
20天前
已完结
Status of Ga2O3 for power device and UV photodetector applications
1个月前
已完结
Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE
2个月前
已完结
High power density gallium nitride radio frequency transistors via enhanced nucleation in heteroepitaxy
3个月前
已完结
TCAD analysis of gate leakage and threshold drift in GaN devices with dual-gate structure
4个月前
已完结
Unveiling GaN HEMT Structure–Performance Relationships: A TCAD-Validated Framework for Physical Model Selection
4个月前
已完结
Enhanced 2DEG confinement in GaN-based HEMTs: Exploring the role of AlGaN back barriers through Schrödinger - Poisson simulations and experimental validation
4个月前
已完结
Enhancement mode β-(Al0.19Ga0.81)2O3/Ga2O3 HFETs with superlattice back-barrier layer
4个月前
已完结
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