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50 积分 2023-10-17 加入
ScAlN/GaN High Electron Mobility Transistor Heterostructures Grown by Ammonia Source Molecular Beam Epitaxy on Silicon Substrate
1个月前
已完结
Scandium Aluminum Nitride as an Emerging Material for High Power Transistors
1个月前
已完结
GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz
2个月前
已完结
Study on Electrical and Temperature Characteristics of β-Ga2O3-Based Diodes Controlled by Varying Anode Work Function
2个月前
已完结
Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV
3个月前
已完结
Study of Vertical Ga2O3 FinFET Short Circuit Ruggedness using Robust TCAD Simulation
3个月前
已关闭
$\beta$ -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz
3个月前
已完结
Study of Vertical Ga2O3 FinFET Short Circuit Ruggedness using Robust TCAD Simulation
3个月前
已关闭
Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors
3个月前
已完结
Multidimensional device architectures for efficient power electronics
3个月前
已完结
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